- oxide-silicon interface
- oxide-silicon interface Oxid-Silicium-Grenzfläche f
English-German dictionary of Electrical Engineering and Electronics. 2013.
English-German dictionary of Electrical Engineering and Electronics. 2013.
Silicon on insulator — technology (SOI) refers to the use of a layered silicon insulator silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby… … Wikipedia
Silicon carbide — Chembox new Name = Silicon carbide ImageFile = Silicon carbide 3D balls.png ImageSize = 140px ImageName = Ball and stick model of part of a crystal of SiC ImageFile1 = silicon carbide detail.jpg ImageSize1 = 140px OtherNames = Section1 = Chembox… … Wikipedia
Silicon monoxide — Chembox new ImageFile = ImageSize = IUPACName = OtherNames = Section1 = Chembox Identifiers CASNo = 10097 28 6 (solid) PubChem = SMILES = Section2 = Chembox Properties Formula = SiO MolarMass = 44.0850 g/mol Appearance = brown black glassy solid… … Wikipedia
Ethylene oxide — Oxirane redirects here. For oxiranes as a class of molecules, see epoxide. Ethylene oxide … Wikipedia
Beryllium oxide — Preferred IUPAC name Beryllium oxide[ … Wikipedia
Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Thermal oxidation — In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer (semiconductor). The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react… … Wikipedia
Deal–Grove model — The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… … Wikipedia
Negative bias temperature instability — (NBTI) is a key reliability issue in MOSFETs. It is of immediate concern in p channel MOS devices, since they almost always operate with negative gate to source voltage; however, the very same mechanism affects also nMOS transistors when biased… … Wikipedia
Deal-Grove model — The Deal Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… … Wikipedia